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Applied Physics Letters

Volumn 98, Issue 14, 2011, Pages

Directed self-assembly of InAs quantum dots on nano-oxide templates

(7) Dias, N L a Garg, A a Reddy, U a Young, J D a Verma, V B b Mirin, R P b Coleman, J J a

a University of Illinois at Urbana Champaign (United States)

b NATIONAL INSTITUTE OF STANDARDS AND TECHNOLOGY (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DIRECTED SELF-ASSEMBLY; DRY AND WET; ETCH DAMAGE; GAAS; INAS QUANTUM DOTS; METALORGANIC CHEMICAL VAPOR DEPOSITION; NANO-OXIDES; NUCLEATION TRANSITION; QUANTUM DOT; ROOM-TEMPERATURE PHOTOLUMINESCENCE; STRUCTURAL CHARACTERIZATION; UNIFORM SIZE;

ELECTRON BEAMS; EMISSION SPECTROSCOPY; INDIUM ARSENIDE; METALLORGANIC CHEMICAL VAPOR DEPOSITION; ORGANIC CHEMICALS; ORGANOMETALLICS; SEMICONDUCTING INDIUM; SILICON COMPOUNDS; WET ETCHING;

SEMICONDUCTOR QUANTUM DOTS;

EID: 79954453561 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3579253 Document Type: Article

Times cited : (13)

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