|
|
Volumn 39, Issue 4 B, 2000, Pages 2344-2346
|
|
Area-controlled growth of InAs quantum dots by selective MOCVD
|
|
Author keywords
Area controlled growth; InAs; MOCVD; Quantum dots; Selective area growth
|
|
Indexed keywords
ELECTRON BEAM LITHOGRAPHY;
LIGHT ABSORPTION;
METALLORGANIC CHEMICAL VAPOR DEPOSITION;
PHOTOLUMINESCENCE;
QUANTUM WELL LASERS;
REACTIVE ION ETCHING;
SEMICONDUCTING INDIUM COMPOUNDS;
SEMICONDUCTOR DEVICE MANUFACTURE;
SEMICONDUCTOR DEVICE STRUCTURES;
SEMICONDUCTOR GROWTH;
SILICA;
AREA CONTROLLED GROWTH;
INDIUM ARSENIDE QUANTUM DOTS;
LASER STRUCTURE;
PHOTONIC CRYSTAL REFLECTORS;
SELECTIVE AREA GROWTH;
SEMICONDUCTOR QUANTUM DOTS;
|
|
EID: 0033692007
PISSN: 00214922
EISSN: None
Source Type: Journal
DOI: 10.1143/jjap.39.2344 Document Type: Article |
|
Times cited : (4)
|
|
References (10)
|
