Ordering of high-quality InAs quantum dots on defect-free nanoholes

Applied Physics Letters

Volumn 88, Issue 7, 2006, Pages

  Kim, Jong Su ^a,b   Kawabe, Mitsuo ^a   Koguchi, Nobuyuki ^a  

^a NATIONAL INSTITUTE FOR MATERIALS SCIENCE   (Japan)

^b Gwangju Institute of Science and Technology (GIST)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC HYDROGEN ETCHING; CHEMICAL DEFECTS; HIGH QUALITY INAS QUANTUM DOTS; NANO HOLES;

ATOMIC FORCE MICROSCOPY; CRYSTAL DEFECTS; EPITAXIAL GROWTH; NANOSTRUCTURED MATERIALS; NUCLEATION; OXIDATION; SEMICONDUCTOR QUANTUM DOTS;

SEMICONDUCTING INDIUM COMPOUNDS;

EID: 32944474069     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2174097     Document Type: Article

References (13)

1. E. Waks, K. Inoue, C. Santori, D. Fattal, J. Vuckovic, G. S. Solomon, and Y. Yamamoto, Nature (London) 420, 762 (2002).
2. I. Amlani, A. O. Orlov, G. Toth, G. H. Bernstein, C. S. Lent, and G. L. Snider, Science 284, 289 (1999).
3. T. Ishikawa, T. Nishimura, S. Kohmoto, and K. Asakawa, Appl. Phys. Lett. 76, 167 (2000).
4. S. Kohmoto, H. Nakamura, T. Ishikawa, and K. Asakawa, Appl. Phys. Lett. 75, 3488 (1999).
5. H. Kroemer, J. Cryst. Growth 251, 17 (2003).
6. J. S. Kim, M. Kawabe, and N. Koguchi, J. Cryst. Growth 262, 265 (2004).
7. T. Sugaya and M. Kawabe, Jpn. J. Appl. Phys., Part 2 30, L402 (1991).
8. J. S. Kim, M. Kawabe, and N. Koguchi, Jpn. J. Appl. Phys., Part 2 0021-4922 10.1143/JJAP.43.L103 43, L103 (2004); J. S. Kim, M. Kawabe, N. Koguchi, D.-Y. Lee, J. S. Kim, and I.-H. Bae, Appl. Phys. Lett. 87, 261914 (2005).
9. J. S. Kim, M. Kawabe, and N. Koguchi, Jpn. J. Appl. Phys., Part 2 0021-4922 10.1143/JJAP.43.L103 43, L103 (2004); J. S. Kim, M. Kawabe, N. Koguchi, D.-Y. Lee, J. S. Kim, and I.-H. Bae, Appl. Phys. Lett. 87, 261914 (2005).
10. J. S. Kim and N. Koguchi, Appl. Phys. Lett. 85, 5893 (2004).
11. Y. Okada, S. Amano, M. Kawabe, and J. S. Harris, Jr., J. Appl. Phys. 83, 7998 (1998).
12. N. Razek, K. Otte, T. Chasś, D. Hirsch, A. Schindler, F. Frost, and B. Rauschenbach, J. Vac. Sci. Technol. A 20, 1492 (2002).
13. M. Yamada, Jpn. J. Appl. Phys., Part 2 35, L651 (1996).