Temperature-dependent photoluminescence from patterned InAs quantum dots formed using metalorganic chemical vapor epitaxy

Journal of Applied Physics

Volumn 99, Issue 3, 2006, Pages

  Huffaker, D L ^a   Hains, C P ^a   Nuntawong, N ^a   Xin, Y C ^a   Wong, P S ^a   Xue, L ^a   Brueck, S R J ^a   Lester, L ^a  

^a UNIVERSITY OF NEW MEXICO   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

TEMPERATURE STABILITY; TEMPERATURE-DEPENDENT PHOTOLUMINESCENCE;

METALLORGANIC CHEMICAL VAPOR DEPOSITION; SELF ASSEMBLY; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR LASERS; SEMICONDUCTOR QUANTUM DOTS;

PHOTOLUMINESCENCE;

EID: 33645510430     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2165415     Document Type: Article

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