Effects of Hf incorporation in solution-processed Hf-InZnO TFTs

Thin Solid Films

Volumn 519, Issue 17, 2011, Pages 5740-5743

  Jeong, Woong Hee ^a   Kim, Gun Hee ^a   Kim, Dong Lim ^a   Shin, Hyun Soo ^a   Kim, Hyun Jae ^a   Ryu, Myung Kwan ^b   Park, Kyung Bae ^b   Seon, Jong Baek ^b   Lee, Sang Yoon ^b  

^a Yonsei University   (South Korea)

^b Samsung Advanced Institute of Technology (SAIT)   (South Korea)

Author keywords

Hf incorporation; Hf InZnO; Solution process; Standard electrode potential

Indexed keywords

ABSORBANCES; ATOMIC CONCENTRATION; ELECTRICAL EFFECTS; ELECTRICAL PROPERTY; HF INCORPORATION; HF-INZNO; METAL CATION; ON-CURRENTS; OPTICAL BAND GAP ENERGY; SOLUTION PROCESS; SOLUTION-PROCESSED; STANDARD ELECTRODE POTENTIAL; SUBTHRESHOLD SWING;

CARRIER CONCENTRATION; ELECTRIC PROPERTIES; GALLIUM; THIN FILM TRANSISTORS;

HAFNIUM;

EID: 79957998907     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2010.12.210     Document Type: Conference Paper

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