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Applied Physics Letters

Volumn 99, Issue 17, 2011, Pages

Origin of instability by positive bias stress in amorphous Si-In-Zn-O thin film transistor

(5) Hyung Kim, Do a,b Youn Yoo, Dong c Kwang Jung, Hyun d Hwan Kim, Dae d Yeol Lee, Sang a

a Chongju University (South Korea)

b Dongguk University (South Korea)

c Korea Institute of Science and Technology (South Korea)

d Kookmin University (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

DENSITY OF STATE; ENERGY RANGES; POSITIVE BIAS; SI CONCENTRATION; XPS ANALYSIS;

AMORPHOUS FILMS; CONDUCTION BANDS; ELECTRON MOBILITY; OXYGEN; PHOTOELECTRON SPECTROSCOPY; SEMICONDUCTING SILICON COMPOUNDS; SILICON; STABILITY; THIN FILM DEVICES; THIN FILM TRANSISTORS; THIN FILMS; TRANSISTORS; X RAY PHOTOELECTRON SPECTROSCOPY; ZINC;

AMORPHOUS SILICON;

EID: 80555154269 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3657511 Document Type: Article

Times cited : (22)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.