Electrical characterization and dielectric properties of metal-oxide-semiconductor structures using high-K CeZrO4 ternary oxide as gate dielectric

Japanese Journal of Applied Physics

Volumn 48, Issue 5 PART 2, 2009, Pages

  Juan, Pi Chun ^a   Liu, Chuan Hsi ^b   Lin, Cheng Li ^c   Ju, Shin Chun ^a   Chen, Main Gwo ^d   Chanf, Ingram Yin Ku ^d   Lu, Jong Hong ^a  

^a MING CHI UNIVERSITY OF TECHNOLOGY   (Taiwan)

^b NATIONAL TAIWAN NORMAL UNIVERSITY   (Taiwan)

^c FENG CHIA UNIVERSITY   (Taiwan)

^d NATIONAL TSING HUA UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTALLINE PHASIS; DC POWER; DIELECTRIC CONSTANTS; EFFECTIVE OXIDE THICKNESS; ELECTRICAL CHARACTERIZATION; FLAT-BAND VOLTAGE SHIFT; METAL OXIDE SEMICONDUCTOR STRUCTURES; OPTIMUM BALANCE; OXYGEN CONTENT; OXYGEN GAS FLOW; POST-ANNEALING TEMPERATURE; RELATIVE DIELECTRIC CONSTANT; RF-MAGNETRON CO-SPUTTERING; TERNARY OXIDES; ZIRCONATES;

CERAMIC CAPACITORS; CERIUM; DIELECTRIC WAVEGUIDES; ELECTRIC POWER MEASUREMENT; ELECTRIC PROPERTIES; GATE DIELECTRICS; GATES (TRANSISTOR); LEAKAGE CURRENTS; OXYGEN; PERMITTIVITY; PLASMAS; X RAY DIFFRACTION; ZIRCONIUM;

X RAY PHOTOELECTRON SPECTROSCOPY;

EID: 70249131157     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.48.05DA02     Document Type: Article

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