High-resolution soft x-ray spectroscopic study on amorphous gallium indium zinc oxide thin films

Journal of Applied Physics

Volumn 108, Issue 2, 2010, Pages

  Lee, Mi Ji ^a   Kang, Se Jun ^a   Baik, Jae Yoon ^a   Kim, Ki Jeong ^a   Kim, Hyeong Do ^a   Shin, Hyun Joon ^a   Chung, Jaegwan ^b   Lee, Jaecheol ^b   Lee, Jaehak ^b  

^a Pohang University of Science and Technology (POSTECH)   (South Korea)

^b Samsung Advanced Institute of Technology (SAIT)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

BAND GAPS; CHEMICAL STATE; CONDUCTION-BAND MINIMUM; CORE LEVELS; D ORBITALS; ELECTRICAL CONDUCTION; GALLIUM INDIUM ZINC OXIDES; HIGH RESOLUTION; MAIN COMPONENT; O K-EDGES; ORBITALS; PHOTON ENERGY; QUATERNARY SYSTEMS; SI SUBSTRATES; SOFT X-RAY; SPECTRAL PEAK; SPECTROSCOPIC STUDIES; VALENCE-BAND MAXIMUMS; ZNO;

AMORPHOUS FILMS; BINDING ENERGY; ELECTRON MOBILITY; FILM PREPARATION; GALLIUM; INDIUM; OXIDE FILMS; PHOTONS; SPECTROSCOPIC ANALYSIS; SYNCHROTRON RADIATION; THIN FILMS; X RAY LITHOGRAPHY; X RAY PHOTOELECTRON SPECTROSCOPY; X RAY SPECTROSCOPY; X RAYS; ZINC; ZINC OXIDE;

ABSORPTION SPECTROSCOPY;

EID: 77955778276     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3457782     Document Type: Article

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