Formation of cobalt-silicide nanocrystals in Ge-doped dielectric layer for the application on nonvolatile memory

Applied Physics Letters

Volumn 92, Issue 15, 2008, Pages

  Hu, Chih Wei ^a   Chang, Ting Chang ^b   Liu, Po Tsun ^a   Tu, Chun Hao ^a   Lee, Sheng Kai ^a   Sze, Simon M ^a   Chang, Chun Yen ^a   Chiou, Bi Shiou ^a   Tseng, Tseung Yuan ^a  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^b NATIONAL SUN YAT SEN UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; DIELECTRIC MATERIALS; SEMICONDUCTOR INSULATOR BOUNDARIES; TRANSMISSION ELECTRON MICROSCOPY;

COBALT SILICIDE; NONVOLATILE MEMORY;

NANOCRYSTALS;

EID: 42349104324     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2908916     Document Type: Article

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