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Applied Physics Letters

Volumn 95, Issue 5, 2009, Pages

Charge trap memory characteristics of AlOx shell-Al core nanoparticles embedded in HfO2 gate oxide matrix

(3) Lee, Jun Seok a Yang, Jung Yup b Hong, Jin Pyo a

a Hanyang University (South Korea)

b Hyosung Co (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

AL-NANOPARTICLES; BAND MODEL; BARRIER WIDTHS; CHARGE RETENTION TIME; CHARGE TRAP; ELECTRICAL MEASUREMENT; GATE OXIDE; INTERFACE STATE; MEMORY WINDOW; METAL OXIDE SEMICONDUCTOR STRUCTURES; MOS STRUCTURE; RETENTION CHARACTERISTICS; TRANSMISSION ELECTRON MICROSCOPY IMAGES; TUNNELING BARRIER;

ALUMINUM; HAFNIUM COMPOUNDS; METALLIC COMPOUNDS; MOS DEVICES; NANOPARTICLES; TRANSMISSION ELECTRON MICROSCOPY; WINDOWS;

SHELLS (STRUCTURES);

EID: 68349157463 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3202412 Document Type: Article

Times cited : (9)

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