Core-shell germanium-silicon nanocrystal floating gate for nonvolatile memory applications

IEEE Transactions on Electron Devices

Volumn 55, Issue 12, 2008, Pages 3610-3614

  Liu, Hai ^a   Winkenwerder, Wyatt ^a   Liu, Yueran ^a,b   Ferrer, Domingo ^a   Shahrjerdi, Davood ^a   Stanley, Scott K ^a,c   Ekerdt, John G ^a   Banerjee, Sanjay K ^a  

^a The University of Texas at Austin   (United States)

^b Advanced Process Control   (United States)

^c NATIONAL INSTITUTE OF STANDARDS AND TECHNOLOGY   (United States)

Author keywords

Germanium silicon core shell nanocrystal (NC); High quality interface; NC Flash memory

Indexed keywords

DATA STORAGE EQUIPMENT; GERMANIUM; HAFNIUM COMPOUNDS; NANOCRYSTALLINE ALLOYS; NANOCRYSTALS; NONVOLATILE STORAGE; SEMICONDUCTING SILICON COMPOUNDS; SHELLS (STRUCTURES); SILANES; SILICON;

ANNEALING TREATMENTS; BEFORE AND AFTER; CHARGE STORAGE NODES; CORE SHELLS; DEVICE PERFORMANCES; FLOATING GATES; HIGH-QUALITY INTERFACE; NC FLASH MEMORY; NONVOLATILE-MEMORY APPLICATIONS; SHELL LAYERS; SILICON NANOCRYSTALS; TRAP DENSITIES;

FLASH MEMORY;

EID: 57149131556     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2008.2006889     Document Type: Article

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