First principles study on the switching mechanism in Resistance Random Access Memory devices

International Conference on Simulation of Semiconductor Processes and Devices, SISPAD

Volumn , Issue , 2011, Pages 211-214

  Kasai, Hideaki ^a   Aspera, Susan Meñez ^a   Kishi, Hirofumi ^a   Awaya, Nobuyoshi ^b   Ohnishi, Shigeo ^b   Tamai, Yukio ^b  

^a OSAKA UNIVERSITY   (Japan)

^b SHARP CORPORATION   (Japan)

Author keywords

First Principles Study; RRAM; TMO

Indexed keywords

CHARGE CARRIER TRAPPING; CONDUCTION PATHS; ELECTRODE LAYERS; EXPERIMENTAL DATA; FIRST-PRINCIPLES CALCULATION; FIRST-PRINCIPLES STUDY; INSULATOR TO METAL; NONVOLATILE MEMORY DEVICES; OXYGEN VACANCY MIGRATION; RESET PULSE; RESISTANCE RANDOM ACCESS MEMORY; RRAM; SLAB MODEL; SWITCHING MECHANISM; TMO; TRANSITION-METAL OXIDES;

ACTIVATION ENERGY; CHARGE CARRIERS; COBALT COMPOUNDS; DENSITY FUNCTIONAL THEORY; ELECTRONIC PROPERTIES; HAFNIUM OXIDES; INVESTMENTS; METAL INSULATOR TRANSITION; OXYGEN; OXYGEN VACANCIES; SEMICONDUCTOR DEVICES; SWITCHING; TANTALUM; TRANSITION METALS;

RANDOM ACCESS STORAGE;

EID: 80055005414     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/SISPAD.2011.6035088     Document Type: Conference Paper

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