Detection of charge motion in a non-metallic silicon isolated double quantum dot

New Journal of Physics

Volumn 13, Issue , 2011, Pages

  Ferrus, T ^a   Rossi, A ^a   Tanner, M ^a   Podd, G ^a   Chapman, P ^a   Williams, D A ^a  

^a HITACHI CAMBRIDGE LABORATORY   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITIVELY COUPLED; CHARGE MOTION; CHARGE SENSING; DOPED STRUCTURES; DOT STRUCTURE; EFFICIENT DETECTION; ELECTRON MOTION; GATE VOLTAGES; INELASTIC COTUNNELING; ISOLATED DOUBLE QUANTUM DOTS; NANO-METER SCALE; NON-METALLIC; PEAK SHIFT; PHOSPHORUS-DOPED; SINGLE ELECTRON;

CHARGE TRANSFER; CURRENT VOLTAGE CHARACTERISTICS; DEFECT DENSITY; DETECTORS; ION EXCHANGE; PHOSPHORUS; QUANTUM CHEMISTRY; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DEVICE STRUCTURES; SILICON WAFERS; SINGLE ELECTRON TRANSISTORS; TRANSIENTS; TRANSPORT PROPERTIES;

SEMICONDUCTOR QUANTUM DOTS;

EID: 80054873761     PISSN: 13672630     EISSN: None     Source Type: Journal    
DOI: 10.1088/1367-2630/13/10/103012     Document Type: Article

References (57)

1. Lambe J and Jaklevic R C 1969 Phys Rev Lett 22 1371
2. Averin D V and Likharev K K 1986 J Low Temp Phys 62 345
3. Fulton T A and Dolan G J 1987 Phys Rev Lett 59 109
4. Lafarge P, Pothier H, Williams E R, Esteve D, Urbina C and Devoret M H 1991 Z Phys B 85 327
5. Martinis J M, Nahum M and Jensen H D 1994 Phys Rev Lett 72 904
6. Guo L, Leobandung E and Chou S Y 1997 Science 275 649
7. Grossing G and Zeilinger A 1988 Complex Syst 2 197
8. Grossing G and Zeilinger A 1988 Complex Syst 2 611
9. Warren W S 1997 Science 277 1688
10. Shnirman A, Schön G and Hermon Z 1997 Phys Rev Lett 79 2371
11. Steane A 1997 Appl Phys B 64 623
12. Takeuchi S 2000 Phys Rev A 62 032301
13. Loss D and DiVincenzo D P 1998 Phys Rev A 57 120
14. Averin D V and Likharev K K 1991 Mesoscopic Phenomena in Solids vol 30 (New York: North-Holland) chapter 6 p 208
15. Averin D V and Nazarov Yu V 1990 Phys Rev Lett 65 2446
16. Berman D, Zhitenev N B, Ashoori R C, Smith H I and Melloch M R 1997 J Vac Sci Technol B 15 2844
17. Meirav U, Kastner M A and Wind S J 1990 Phys Rev Lett 65 771
18. Kouwenhoven L P, van der Vaart N C, Johnson A T, Kool W, Harmans C J P M, Williamson J G, Staring A A M and Foxon C T 1991 Z Phys B 85 367
19. Pothier H, Lafarge P, Orfila P F, Urbina C, Esteve D and Devoret M H 1991 Physica B 169 573
20. Huang X et al 1999 IEDM Tech Dig p 67
21. Fujiwara A, Inokawa H, Yamazaki K, Namatsu H, Takahashi Y, Zimmerman N M and Martin S B 2006 Appl Phys Lett 88 053121
22. Angus S J, Ferguson A J, Dzurak A S and Clark R G 2007 Nanoletters 7 2051
23. Buehler T M, Reilly D J, Starrett R P, Kenyon S, Hamilton A R, Dzurak A S and Clark R G 2003 Microelectron Eng 67-68 775
24. Buehler T M, Reilly D J, Brenner R, Hamilton A R, Dzurak A S and Clark R G 2003 Appl Phys Lett 82 577
25. Matsuoka H and Kimura S 1995 Appl Phys Lett 66 613
26. Yano K, Ishii T, Hashimoto T, Kobayashi T, Murai F and Seki K 1994 IEEE Trans Electron Devices 41 1628
27. Takahashi Y, Nagase M, Namatsu H, Kurihara K, Iwadate K, Nakajima Y, Horiguchi S, Murase K and Tabe M 1995 Electron Lett 31 136
28. Hofmann F, Heinzel T, Wharam D A, Kotthaus J P, Böhm G, KleinW, Tränkle G andWeimann G 1995 Phys Rev B 51 13872
29. Pierre M, Wacquez R, Roche B, Jehl X, Sanquer M, Vinet M, Prati E, Belli M and Fanciulli M 2009 Appl Phys Lett 95 242107
30. Yamahata G, Tsuchiya Y, Mizuta H, Uchida K and Oda S 2009 Solid State Electron 53 779
31. Hasko D G et al 2008 Appl Phys Lett 93 192116
32. Zhitenev N B, Brodsky M, Ashoori R C, Pfeiffer L N and West K W 1999 Science 285 715
33. Gunther A, Khoury M, Miličcić S, Vasileska D, Thornton T and Goodnick S M 2000 Superlattices Microstruct 27 373
34. Morello A, Escott C C, Huebl H, Willems van Beveren L H, Hollenberg L C L, Jamieson D N, Dzurak A S and Clark R G 2009 Phys Rev B 80 081307
35. Morello A, Escott C C, Huebl H, Willems van Beveren L H, Hollenberg L C L, Jamieson D N, Dzurak A S and Clark R G 2010 Nature 467 687
36. Wasshuber C, Kosina H and Selberherr S 1997 IEEE Trans Comput.-Aided Des Integr Circuits Syst 16 937
37. Nabor K, Kim S and White J 1992 IEEE Trans Microw Theory Tech 40 1496
38. Lee K H, Greentree A D, Dinale J P, Escott C C, Dzurak A S and Clark R G 2005 Nanotechnology 16 74
39. Kawata Y, Khalafalla M A H, Usami K, Tsuchiya Y, Mizuta H and Oda S 2007 Japan J Appl Phys 46 4386
40. Fujisawa T, Hayashi T, Hirayama Y, Cheong H D and Jeong Y H 2004 Appl Phys Lett 84 2343
41. Rossi A, Ferrus T, Podd G J and Williams D A 2010 Appl Phys Lett 97 223506
42. Hofmann F, Heinzel T, Wharam D A, Kotthaus J P, Bohm G, KleinW, Trankle G andWeimann G 1995 Phys Rev B 51 13872
43. Müller H-O, Furlan M, Heinzel T and Ensslin K 2001 Europhys Lett 55 253
44. Pepper M 1977 Proc R Soc A 353 225
45. Rudin A M, Guo L J, Glazman L I and Chou S Y 1998 Appl Phys Lett 73 3429
46. Altermatt P P, Schenk A and Heiser G 2006 J Appl Phys 100 113714
47. Abrahams E, Anderson P W, Licciardello D C and Ramakrishnan T V 1979 Phys Rev Lett 42 673
48. Thomson J J 1910 Phil Mag 20 752A
49. Benninghoven 1969 Phys Status Solidi 34 K169
50. Lau F, Mader L, Mazure C, Werner C and Orlowski M 1989 Appl Phys A 49 671
51. Guo L J and Chou S Y 1998 Electron Lett 34 1031
52. Kodera T, Ferrus T, Nakaoka T, Podd G, Tanner M, Williams D and Arakawa Y 2009 Japan J Appl Phys 48 06FF15
53. Tilke A T, Simmel F C, Blick R H, Lorenz H and Kotthaus J P 2001 Prog Quantum Electron 25 97
54. Averin D V and Odintsov A A 1989 Phys Lett A 140 251
55. Geerligs L J, Averin D V and Mooij J E 1990 Phys Rev Lett 65 3037
56. Luo X, Tomcsanyi M, Orlov A O, Kosel T H and Snider G L 2006 Appl Phys Lett 89 043511
57. Tager A A, Xu J M and Moskovits M 1997 Phys Rev B 55 4530