Integration of tunnel-coupled double nanocrystalline silicon quantum dots with a multiple-gate single-electron transistor

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 46, Issue 7 A, 2007, Pages 4386-4389

  Kawata, Yoshiyuki ^a   Khalafalla, Mohammed A H ^a   Usami, Kouichi ^a   Tsuchiya, Yoshishige ^a   Mizuta, Hiroshi ^a   Oda, Shunri ^a  

^a JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

Author keywords

Double quantum dots; Nanocrystalline silicon quantum dots; Qubit; Single electron transistor; Three dimensional capacitance simulation

Indexed keywords

ELECTRON TUNNELING; GATES (TRANSISTOR); LITHOGRAPHY; NANOCRYSTALLINE MATERIALS; SEMICONDUCTING SILICON;

DOUBLE QUANTUM DOTS; NANOCRYSTALLINE-SILICON QUANTUM DOTS; SINGLE-ELECTRON TRANSISTORS; THREE-DIMENSIONAL CAPACITANCE SIMULATION;

SEMICONDUCTOR QUANTUM DOTS;

EID: 34547850281     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.46.4386     Document Type: Article

References (10)

1. T. Fujisawa, T. Hayashi, H. D. Cheong, Y. H. Heong, and Y. Hirayama: Physica E 21 (2004) 1046.
2. E. G. Emiroglu, David G. Hasko, and D. A. Williams: Appl. Phys. Lett. 83 (2003) 3942.
3. J. Gorman, D. G. Hasko, and D. A. Williams: Phys. Rev. Lett. 95 (2005) 090502.
4. A. N. Korotkov: Phys. Rev. B 49 (1994) 10381.
5. T. Ifuku, M. Otobe, A. Itoh, and S. Oda: Jpn. J. Appl. Phys. 36 (1997) 4031.
6. K. Nishiguchi, S. Hara, and S. Oda: Mater. Res. Soc. Symp. Proc. 571 (2000) 43.
7. K. Nishiguchi, X. Zhao, and S. Oda: J. Appl. Phys. 92 (2002) 2748.
8. S. Oda: Adv. Colloid Interface Sci. 71-72 (1997) 31.
9. A. Tanaka, G. Yamahata, Y. Tsuchiya, K. Usami, H. Mizuta, and S. Oda: Curr. Appl. Phys. 6 (2006) 344.
10. A. Dutta, S. P. Lee, Y. Hayafune, and S. Oda: J. Vac. Sci. Technol. B 18 (2000) 2857.