Single-electron transistor as a charge sensor for semiconductor applications

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 15, Issue 6, 1997, Pages 2844-2847

  Berman, David ^a   Zhitenev, Nikolai B ^b   Ashoori, Raymond C ^b   Smith, Henry I ^a   Melloch, Michael R ^c  

^a USA   (United States)

^b MASSACHUSETTS INSTITUTE OF TECHNOLOGY   (United States)

^c PURDUE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0042502919     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.589741     Document Type: Article

References (9)

1. P. Lafarge, H. Pothier, E. R. Williams, D. Esteve, C. Urbina, and M. H. Devoret, Z. Phys. B 85, 327 (1991).
2. D. Berman, R. C. Ashoori, and H. I. Smith, in Proceedings of the International Conference on Quantum Devices and Circuits (Imperial College Press, Alexandria, Egypt, 1996), p. 217.
3. T. A. Fulton and G. J. Dolan, Phys. Rev. Lett. 59, 109 (1987).
4. Copolymer of polymethylmethacrylate (91.5%), and polymethacrylic acid (8.5%), is in an 11% solution in 2-ethoxyethanol from Microlithography Chemical Corp., Newton, MA. It is spun at 5 kRPM for 45 s, then baked at 125°C for 30 min. The resulting thickness is 450 nm.
5. L. Ji, P. D. Dresselhaus, S. Han, K. Lin, W. Zheng, and J. E. Lukens, J. Vac. Sci. Technol. B 12, 3619 (1994).
6. The 950 000 molecular weight PMMA is in a 2% solution in Anisole from Microlithography Chemical Corp., Newton, MA. It is spun at 5 kRPM for 45 s, then baked at 170°C for 30 min. The resulting thickness is 50 nm.
7. D. V. Averin and K. K. Likharev, in Mesoscopic Phenomena in Solids, edited by B. L. Altshuler, P. A. Lee, and R. A. Webb (North-Holland, Amsterdam, 1991), p. 173.
8. E. H. Visscher, J. Lindeman, S. M. Verbrugh, P. Hadley, and J. E. Mooij, Appl. Phys. Lett. 68, 2014 (1996).
9. J. Pettersson, P. Wahlgren, P. Delsing, D. B. Haviland, T. Claeson, N. Rorsman, and H. Zirath, Phys. Rev. B 53, R13 272 (1996).