Modelling background charge rearrangements near single-electron transistors as a poisson process

Europhysics Letters

Volumn 55, Issue 2, 2001, Pages 253-259

  Muller H O ^a,b   Furlan, M ^a,c   Heinzel, T ^a   Ensslin, K ^a  

^a ETH ZURICH   (Switzerland)

^b ISE   (Switzerland)

^c Swiss Federal Office of Metrology   (Switzerland)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0035796147     PISSN: 02955075     EISSN: None     Source Type: Journal    
DOI: 10.1209/epl/i2001-00407-y     Document Type: Article

References (18)

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