Fine and large coulomb diamonds in a silicon quantum dot

Japanese Journal of Applied Physics

Volumn 48, Issue 6 PART 2, 2009, Pages

  Kodera, Tetsuo ^a   Ferrus, Thierry ^b   Nakaoka, Toshihiro ^a,c   Podd, Gareth ^b   Tanner, Michael ^b   Williams, David ^b   Arakawa, Yasuhiko ^a,c,d  

^a UNIVERSITY OF TOKYO   (Japan)

^b HITACHI CAMBRIDGE LABORATORY   (United Kingdom)

^c INSTITUTE OF INDUSTRIAL SCIENCE   (Japan)

^d UNIVERSITY OF TOKYO   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

COMPLEMENTARY METAL OXIDE SEMICONDUCTORS; COULOMB DIAMONDS; ELECTRICAL MEASUREMENT; FINE STRUCTURES; LIQUID HELIUM; LOW NOISE; LOW TEMPERATURES; MASTER EQUATIONS; N TYPE SILICON; QUANTUM DOT; SILICON QUANTUM DOTS; SOURCE-DRAIN VOLTAGE;

HELIUM; LIQUEFIED GASES; OPTICAL WAVEGUIDES; QUANTUM CHEMISTRY; SEMICONDUCTING SILICON COMPOUNDS; SILICON WAFERS; SUPERFLUID HELIUM; TRANSPORT PROPERTIES;

SEMICONDUCTOR QUANTUM DOTS;

EID: 70249114451     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.48.06FF15     Document Type: Article

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