Charge-ring model for the charge-induced confinement enhancement in stacked quantum-dot transistors

Applied Physics Letters

Volumn 73, Issue 23, 1998, Pages 3429-3431

  Rudin, A M ^a   Guo, L J ^b   Glazman, L I ^a   Chou, S Y ^b  

^a UNIVERSITY OF MINNESOTA   (United States)

^b Princeton University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000422330     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.122787     Document Type: Article

References (8)

1. L. J. Guo, E. Leobandung, and S. Y. Chou, Science 275, 649 (1997).
2. A. Nakajima, T. Futatsugi, K. Kosemura, T. Fukano, and N. Yokoyama, Appl. Phys. Lett. 70, 1742 (1997).
3. L. J. Guo and S. Y. Chou, Electron. Lett. 34, 1031 (1998).
4. C. W. J. Beenakker, Phys. Rev. B 44, 1646 (1991).
5. -1/2, see L. D. Landau and E. M. Lifshitz, Electrodynamics of Continuous Media, 2nd ed. (Pergamon, New York, 1984).
6. U. Merkt, J. Huser, and M. Wagner, Phys. Rev. B 43, 7320 (1991).
7. P. Moon and D.E. Spencer, Field Theory Handbook (Springer, New York, 1971).
8. See, e.g., J. D. Jackson, Classical Electrodynamics (Wiley, New York, 1975).