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Volumn , Issue , 2010, Pages 103-104

Implications of record peak current density In0.53Ga 0.47As Esaki tunnel diode on tunnel FET logic applications

Author keywords

[No Author keywords available]

Indexed keywords

DEVICE SIMULATORS; DOUBLE GATE; DRIVE CURRENTS; ESAKI TUNNELS; GATE VOLTAGES; II-IV SEMICONDUCTORS; IN-SITU; LOW SUPPLY VOLTAGES; MEASURED CURRENTS; MODEL PARAMETERS; MOS-FET; NONLOCAL; PEAK CURRENT DENSITY; SI-BASED; SUBTHRESHOLD; SUPPLY VOLTAGES; TRANSIENT RESPONSE; TUNNEL FET; TUNNEL FIELD EFFECT TRANSISTOR; TUNNELING BARRIER; TUNNELING MODELS; ULTRA-THIN-BODY;

EID: 77957571036     PISSN: 15483770     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/DRC.2010.5551856     Document Type: Conference Paper
Times cited : (11)

References (8)
  • 6
    • 36149021039 scopus 로고
    • Feb.
    • Chynoweth et al., Phys. Rev., 121, pp. 684-694, Feb. 1961.
    • (1961) Phys. Rev. , vol.121 , pp. 684-694
    • Chynoweth1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.