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Volumn , Issue , 2010, Pages 103-104
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Implications of record peak current density In0.53Ga 0.47As Esaki tunnel diode on tunnel FET logic applications
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Author keywords
[No Author keywords available]
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Indexed keywords
DEVICE SIMULATORS;
DOUBLE GATE;
DRIVE CURRENTS;
ESAKI TUNNELS;
GATE VOLTAGES;
II-IV SEMICONDUCTORS;
IN-SITU;
LOW SUPPLY VOLTAGES;
MEASURED CURRENTS;
MODEL PARAMETERS;
MOS-FET;
NONLOCAL;
PEAK CURRENT DENSITY;
SI-BASED;
SUBTHRESHOLD;
SUPPLY VOLTAGES;
TRANSIENT RESPONSE;
TUNNEL FET;
TUNNEL FIELD EFFECT TRANSISTOR;
TUNNELING BARRIER;
TUNNELING MODELS;
ULTRA-THIN-BODY;
FIELD EFFECT TRANSISTORS;
GERMANIUM;
MOSFET DEVICES;
SEMICONDUCTING SILICON COMPOUNDS;
SEMICONDUCTOR DIODES;
THRESHOLD VOLTAGE;
TUNNEL DIODES;
CURRENT VOLTAGE CHARACTERISTICS;
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EID: 77957571036
PISSN: 15483770
EISSN: None
Source Type: Conference Proceeding
DOI: 10.1109/DRC.2010.5551856 Document Type: Conference Paper |
Times cited : (11)
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References (8)
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