Evaluation of sapphire substrate heating behaviour using GaN band-gap thermometry

Journal of Crystal Growth

Volumn 300, Issue 1, 2007, Pages 194-198

  Harris, J J ^a   Thomson, R ^a   Taylor, C ^b   Barlett, D ^b   Campion, R P ^c   Grant, V A ^c   Foxon, C T ^c   Kappers, M J ^d  

^a RTA Instruments   (United Kingdom)

^b k Space Associates Inc   (United States)

^c UNIVERSITY OF NOTTINGHAM   (United Kingdom)

^d UNIVERSITY OF CAMBRIDGE   (United Kingdom)

Author keywords

A1. Heat transfer; A1. Optical absorption; A1. Radiation; A3. Molecular beam epitaxy; B1. Nitrides; B2. Semiconducting gallium compounds

Indexed keywords

ENERGY GAP; GALLIUM NITRIDE; HEAT TRANSFER; LIGHT ABSORPTION; MOLECULAR BEAM EPITAXY; THERMOCOUPLES;

BAND-GAP MATERIALS; SAMPLE-DEPENDENT COUPLING; THERMOMETRY SYSTEM; THICKNESS OSCILLATIONS;

SAPPHIRE;

EID: 33847284395     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2006.11.012     Document Type: Article

References (5)

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5. Land Instruments International, 10 Friends Lane, Newtown, PA 18940-1804, USA.