SCOPUS 정보 검색 플랫폼

Volumn 111, Issue 6, 2011, Pages 576-583

Broadening the applications of the atom probe technique by ultraviolet femtosecond laser

(10) Hono, K a,b,e Ohkubo, T a,e Chen, Y M b Kodzuka, M b Oh ishi, K a,e Sepehri Amin, H b Lia, F e Kinno, T c,e Tomiya, S d Kanitani, Y d

a NATIONAL INSTITUTE FOR MATERIALS SCIENCE (Japan)

b UNIVERSITY OF TSUKUBA (Japan)

c TOSHIBA CORPORATION (Japan)

d SONY CORPORATION (Japan)

e JAPAN SCIENCE AND TECHNOLOGY AGENCY (Japan)

Author keywords

Atom probe; Atom probe tomography; Field evaporation; Laser atom probe

Indexed keywords

ATOMS; EVAPORATION; GRAIN BOUNDARIES; ION BEAMS; MASS SPECTROMETRY; PROBES; SEMICONDUCTOR DEVICES; SEMICONDUCTOR INSULATOR BOUNDARIES; SEMICONDUCTOR LASERS; SIGNAL TO NOISE RATIO; SPECIMEN PREPARATION; ULTRAVIOLET LASERS;

ATOM PROBE; ATOM PROBE ANALYSIS; ATOM PROBE TOMOGRAPHY; FIELD EVAPORATION; IRRADIATION CONDITIONS; PREPARATION TECHNIQUE; THREE-DIMENSIONAL ATOM PROBE; ULTRAVIOLET WAVELENGTH;

ATOM LASERS;

GALLIUM; METAL; OXIDE;

ANALYTIC METHOD; ARTICLE; ATOM PROBE ANALYSIS; ATOM PROBE TOMOGRAPHY; EVAPORATION; FEMTOSECOND LASER; FIELD EMISSION; MAGNET; MASS SPECTROMETRY; PROCESS OPTIMIZATION; QUANTITATIVE ANALYSIS; SEMICONDUCTOR; SIGNAL NOISE RATIO; TOMOGRAPHY; ULTRAVIOLET SPECTROSCOPY;

EID: 80052517388 PISSN: 03043991 EISSN: 18792723 Source Type: Journal
DOI: 10.1016/j.ultramic.2010.11.020 Document Type: Article

Times cited : (90)

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