Monolayer segregation of As atoms at the interface between gate oxide and Si substrate in a metal-oxide-semiconductor field effect transistor by three-dimensional atom-probe technique

Applied Physics Letters

Volumn 92, Issue 10, 2008, Pages

  Inoue, Koji ^a   Yano, Fumiko ^b   Nishida, Akio ^b   Tsunomura, Takaaki ^b   Toyama, Takeshi ^a   Nagai, Yasuyoshi ^a   Hasegawa, Masayuki ^a,c  

^a TOHOKU UNIVERSITY   (Japan)

^b SEMICONDUCTOR LEADING EDGE TECHNOLOGIES INC   (Japan)

^c TOHOKU UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

GATE DIELECTRICS; GRAIN BOUNDARIES; MONOLAYERS; SECONDARY ION MASS SPECTROMETRY; SUBSTRATES;

ATOM-PROBE TECHNIQUES; DOPANT DISTRIBUTION; GATE OXIDES; MONOLAYER SEGREGATION;

MOSFET DEVICES;

EID: 40849097878     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2891081     Document Type: Article

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