Sputtering rates of lead chalcogenide-based ternary solid solutions during inductively coupled argon plasma treatment

Semiconductor Science and Technology

Volumn 26, Issue 10, 2011, Pages

  Zimin, S P ^a   Gorlachev, E S ^a,b   Amirov, I I ^b   Zogg, H ^c   Abramof, E ^d   Rappl, P H O ^d  

^a YAROSLAVL STATE UNIVERSITY   (Russian Federation)

^b Institute of Physics and Technology   (Russian Federation)

^c ETH ZURICH   (Switzerland)

^d INSTITUTO NACIONAL DE PESQUISAS ESPACIAIS   (Brazil)

Author keywords

[No Author keywords available]

Indexed keywords

ALLOY COMPOSITIONS; ARGON PLASMA TREATMENT; ARGON PLASMAS; BINARY COMPOUNDS; BINARY SOLUTIONS; CHARACTERISTIC PROPERTIES; HIGH-DENSITY; INDUCTIVELY-COUPLED; MONOCRYSTALLINE; PBTE; PHYSICAL MODEL; SI (1 1 1); SPUTTERING RATE; SUBLIMATION ENERGY; TERNARY COMPOUNDS;

ELECTROMAGNETIC INDUCTION; EPITAXIAL FILMS; EUROPIUM; LEAD; PHASE CHANGE MEMORY; PLASMA APPLICATIONS; SEMICONDUCTING SELENIUM COMPOUNDS; SEMICONDUCTING SILICON; SEMICONDUCTING TELLURIUM; TERNARY ALLOYS; TIN; TIN ALLOYS;

SOLID SOLUTIONS;

EID: 80053376825     PISSN: 02681242     EISSN: 13616641     Source Type: Journal    
DOI: 10.1088/0268-1242/26/10/105003     Document Type: Article

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