Molecular beam epitaxial growth of high quality Pb1-xSnxTe layers with 0 ≤ x ≤ 1

Journal of Crystal Growth

Volumn 191, Issue 3, 1998, Pages 466-471

  Rappl, P H O ^a   Closs, H ^a   Ferreira, S O ^a   Abramof, E ^a   Boschetti, C ^a   Motisuke, P ^a   Ueta, A Y ^a   Bandeira, I N ^a  

^a INSTITUTO NACIONAL DE PESQUISAS ESPACIAIS   (Brazil)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; MOLECULAR BEAM EPITAXY; SEMICONDUCTOR GROWTH; TERNARY SYSTEMS; X RAY DIFFRACTION ANALYSIS;

BURSTEIN-MOSS SHIFT; LEAD TIN TELLURIDE;

SEMICONDUCTING LEAD COMPOUNDS;

EID: 0032114809     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(98)00135-3     Document Type: Article

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