A new in-situ surface treatment during MBE-grown PbSe on CaF2/Si(1 1 1) heterostructure

Journal of Crystal Growth

Volumn 311, Issue 13, 2009, Pages 3395-3398

  Li, D ^a   Ma, J ^a   Mukherjee, S ^a   Bi, G ^a   Zhao, F ^a   Elizondo, S L ^b   Shi, Z ^a  

^a University of Oklahoma   (United States)

^b Nanolight Inc   (United States)

Author keywords

A1. In situ surface treatment; A2. Growth defects; A3. MBE growth; B2. Monocrystalline PbSe

Indexed keywords

A1. IN-SITU SURFACE TREATMENT; A2. GROWTH DEFECTS; A3. MBE GROWTH; B2. MONOCRYSTALLINE PBSE; EXPERIMENTAL PROCEDURE; GROWTH PITS; HETEROSTRUCTURE; IN-SITU; MBE GROWTH; MONOCRYSTALLINE; MORPHOLOGICAL PROPERTIES; NOVEL SURFACES; SI (1 1 1); SILICON SUBSTRATES; THREADING DISLOCATION; TREATMENT METHODS;

CARRIER MOBILITY; CRYSTAL GROWTH; MOLECULAR BEAMS; MOLECULAR DYNAMICS; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DEVICES; SEMICONDUCTOR GROWTH; SINGLE CRYSTALS; SUBSTRATES;

SURFACE TREATMENT;

EID: 66649124588     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2009.04.033     Document Type: Article

References (15)

1. S.L. Elizondo, F. Zhao, J. Kar, J. Ma, J. Smart, D. Li, S. Mukherjee, Z. Shi, J. Electron. Mater. 37 (2008) 1411.
2. Zogg H., Blunier S., Hoshino T., Maissen C., Masek J., and Tiwari A.N. IEEE Trans. Electron Dev. 38 (1991) 1110
3. Zogg H. Appl. Phys. Lett. 49 (1986) 933
4. Fach A., John J., Muller P., Paglino C., and Zogg H. J. Electron. Mater. 26 (1997) 873
5. Müller P., Zogg H., Fach A., John J., Paglino C., Tiwari A.N., and Krejci M. Phys. Rev. Lett. 78 (1997) 3007
6. Ma J., Li D., Bi G., Zhao F., Elizondo S., Mukherjee S., and Shi Z. J. Electron. Mater. 38 (2009) 325
7. Zogg H., Fach A., John J., Masek J., Müller P., and Paglino C. Narrow Gap Semiconductors vol. 160 (1995), Institute of Physics Publishing Ltd., London
8. McCann P.J., Fang X.M., Liu W.K., Strecker B.N., and Santos M.B. J. Cryst. Growth 175/176 (1997) 1057
9. Müller P., Fach A., John J., Tiwari A.N., Zogg H., and Kostorz G. J. Appl. Phys. 79 (1996) 1911
10. Wu H., Fang X.M., McAlister D., Salas Jr. R., and McCann P.J. J. Vac. Sci. Technol. B 17 (1999) 1263
11. Zogg H. SPIE 3629 (1999) 52
12. Springholz G., Zogg H., and Shi Z. In: Liu W.K., and Santos M.B. (Eds). Thin Films: Heteroepitaxial Systems (1999), World Scientific, Singapore 621-688
13. Gautier C., Breton1 G., Nouaoura1 M., Cambon1 M., Charar1 S., and Averous M. Thin Solid Films 315 (1998) 118
14. Tacke M. Infrared Phys. Technol. 36 (1995) 447
15. Gordon N.T., Hall R.S., Jones C.L., Maxey C.D., Metcalfe N.E., Catchpole R.A., and White A.M. J. Electron. Mater. 29 (2000) 818