ECR etching of GaP, GaAs, InP, and InGaAs in Cl2/Ar, Cl2/N2, BCl3/Ar, and BCl3/N2

Materials Research Society Symposium - Proceedings

Volumn 421, Issue , 1996, Pages 245-250

  Shul, R J ^a   Baca, A G ^a   Rieger, D J ^a   Hou, H ^a   Pearton, S J ^a   Ren, F ^a  

^a SANDIA NATIONAL LABORATORIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ARGON; ATOMIC FORCE MICROSCOPY; CHLORINE; COMPOSITION; ELECTRON CYCLOTRON RESONANCE; ION BOMBARDMENT; MORPHOLOGY; PLASMAS; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS; SURFACE STRUCTURE;

CHLORINE CONTAINING GAS; ETCH RATES; LOW VOLATILITY; PLASMA CHEMISTRIES; SURFACE MORPHOLOGY;

PLASMA ETCHING;

EID: 0030357677     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-421-245     Document Type: Conference Paper

References (15)