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Applied Physics Letters

Volumn 97, Issue 17, 2010, Pages

Investigation of high frequency performance limit of graphene field effect transistors

(2) Pince, Ercag a Kocabas, Coskun a

a BILKENT UNIVERSITY (Turkey)

Author keywords

[No Author keywords available]

Indexed keywords

DIELECTRIC CONSTANTS; GATE INSULATOR; GRAPHENE TRANSISTORS; HIGH FIELD EFFECT MOBILITY; HIGH FREQUENCY PERFORMANCE; HIGH-FREQUENCY ELECTRONICS; IMPURITY CONCENTRATION; IMPURITY SCATTERING; POWER GAINS; PROMISING MATERIALS; RADIO FREQUENCY BANDS; SURFACE COVERAGES; TRANSFER CHARACTERISTICS;

FREQUENCY BANDS; GRAPHENE;

FIELD EFFECT TRANSISTORS;

EID: 78149428027 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3506506 Document Type: Article

Times cited : (17)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.