Comparative study of CNT, silicon nanowire and fullerene embedded multilayer high-k gate dielectric MOS memory devices

Journal of Physics D: Applied Physics

Volumn 44, Issue 40, 2011, Pages

  Sengupta, Amretashis ^a   Sarkar, Chandan Kumar ^a   Requejo, Felix G ^b  

^a JADAVPUR UNIVERSITY   (India)

^b FACULTAD DE CIENCIAS EXACTAS   (Argentina)

Author keywords

[No Author keywords available]

Indexed keywords

BARRIER HEIGHTS; CHARGE DECAY; COMPARATIVE STUDIES; EFFECTIVE ELECTRON MOBILITY; EFFECTIVE MEDIUM THEORIES; EMBEDDED DEVICE; FLOATING GATES; FOWLER-NORDHEIM; HIGH-K GATE DIELECTRICS; IV CHARACTERISTICS; MAXWELL-GARNETT; NANOCRYSTALLINE SI; NITRIDE LAYERS; NON-VOLATILE MEMORIES; RETENTION TIME; SILICON NANOWIRES; THEORETICAL STUDY; TUNNEL OXIDES; TUNNELLING CURRENT; WKB APPROXIMATIONS;

APPROXIMATION THEORY; ASPECT RATIO; CARBON NANOTUBES; ELECTRON MOBILITY; EQUIPMENT; FULLERENES; GATE DIELECTRICS; HAFNIUM OXIDES; LANTHANUM OXIDES; MULTILAYERS; NANOWIRES; NITRIDES; SEMICONDUCTING SILICON; SILICON; SILICON COMPOUNDS; SILICON OXIDES;

MOS DEVICES;

EID: 80053163424     PISSN: 00223727     EISSN: 13616463     Source Type: Journal    
DOI: 10.1088/0022-3727/44/40/405101     Document Type: Article

References (28)

1. Cheong K Y, Moon J H, Park T J, Kim J H, Hwang C S, Kim H J, Bahng W and Kim N K 2007 IEEE Trans. Electron Devices 54 3409-13
2. Iwai H et al 2002 IEDM Technical Digest pp 625-8
3. Tiwari S, Rana F, Hanafi H, Hartstein A, Crabbe E F and Chan K 1996 Appl. Phys. Lett. 68 1377
4. Guan W, Long S, Liu M, Li Z, Hu Y and Liu Q 2007 J. Phys. D: Appl. Phys. 40 2754
5. Choi W K, Chim W K, Heng C L, Teo L W, Ho V, Ng V, Antonaidis D A and Fitzgerald E A 2002 Appl. Phys. Lett. 80 2014
6. Beyer V and von Borany J 2006 Appl. Phys. Lett. 89 193505
7. Ng C Y, Chen T P, Zhao P, Ding L, Liu Y, Tseng A A and Fung S 2006 J. Appl. Phys. 99 106105
8. Yang M, Chen T P, Wong J I, Liu Y, Tseng A A and Fung S 2010 J. Nanosci. Nanotechnol. 10 4517
9. Lu X B and Dai J Y 2006 Appl. Phys. Lett. 88 113104
10. Chakraborty G, Sarkar C K, Lu X B and Dai J Y 2008 Nanotechnology 19 255401
11. Tsukamoto S and Nakayama T 2005 J. Chem. Phys. 122 074702
12. Akinwande D, Nishi Y and Philip Wong H-S 2008 IEEE Trans. Electron. Devices 55 289
13. Saito R, Dresselhaus G and Dresselhaus M S 1998 Physical Properties of Carbon Nanotubes (London: Imperial College Press) p 11
14. Neophytou N, Paul A, Lunstrom M S and Klimeck G 2008 IEEE Trans. Electron. Devices 55 1286
15. Cappeletti P, Gola C, Olivo P and Zanoni E 2001 Flash Memories (Boston, MA: Kluwer Academic) pp 53
16. Chakraborty G, Sengupta A, Requejo F G and Sarkar C K 2011 J. Appl. Phys. 109 064504
17. Gao L and Gu J Z 2002 J. Phys. D: Appl. Phys. 35 267-71
18. De Salvo B, Ghibuado G, Pananakakis G, Masson P, Baron T, Buffet N, Fernandes A and Guillaumot B 2001 IEEE Trans. Electron. Devices 48 1789
19. Yao D, Zhang G and Li B 2008 Nano Lett. 8 4557-61
20. Wildöwer J W G, Venema L C, Rinzler A G, Smalley R E and Dekker C 1998 Nature 391 59-62
21. Ramer N J and Rappe A M 2000 Phys. Rev. B 62 R743
22. Weinberg Z A 1977 Solid State Electron. 20 11
23. Simmons J G 1963 J. Appl. Phys. 34 1793
24. Pourfath M 2007 Numerical study of quantum transport in carbon nanotube based transistors PhD Thesis Technischen Universität Wien
25. Cronin S B 2002 Electronic properties of Bi nanowaves PhD Thesis MIT
26. Lee S J, Shin N H, Ko J J, Park M J and Kummel R 1992 Semicond. Sci. Technol. 7 1072
27. Yang M, Chen T P, Zhu W, Wong J I and Zhang S 2010 Nanosci. Nanotechnol. Lett. 2 7
28. Korotkov A and Likharev K 1999 IEDM Technical Digest p 223