Comparison of charge storage behavior of electrons and holes in a continuous Ge nanocrystal layer

Nanoscience and Nanotechnology Letters

Volumn 2, Issue 1, 2010, Pages 7-10

  Yang, Ming ^a   Chen, Tu Pei ^a   Zhu, Wei ^a   Wong, Jen It ^a   Zhang, Sam ^b  

^a NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

^b NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

Author keywords

Charge Injection; Charge Retention; Ge Nanocrystals; Lateral Charge Diffusion; Non Volatile Memory

Indexed keywords

BARRIER HEIGHTS; CHARGE DIFFUSION; CHARGE LOSS; CHARGE RETENTION; CHARGE STORAGE; ELECTRONS AND HOLES; GE NANOCRYSTALS; HOLE INJECTION; IMPLANTATION TECHNIQUE; LATERAL DIFFUSION; NON-VOLATILE MEMORIES; SI SUBSTRATES;

DIFFUSION BARRIERS; ELECTRON INJECTION; ELECTRONS; HOLE TRAPS; ION IMPLANTATION; NANOCRYSTALS; POLYETHERIMIDES; SILICON COMPOUNDS;

GERMANIUM;

EID: 78651562497     PISSN: 19414900     EISSN: 19414919     Source Type: Journal    
DOI: 10.1166/nnl.2010.1055     Document Type: Article

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