Electrical characteristics of Si nanocrystal distributed in a narrow layer in the gate oxide near the gate synthesized with very-low-energy ion beams

Journal of Applied Physics

Volumn 99, Issue 10, 2006, Pages

  Ng, C Y ^a   Chen, T P ^a   Zhao, P ^a   Ding, L ^a   Liu, Y ^a   Tseng, Ampere A ^b   Fung, S ^c  

^a NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

^b Arizona State University   (United States)

^c UNIVERSITY OF HONG KONG   (Hong Kong)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE-RETENTION CHARACTERISTICS; ROOM TEMPERATURE; SI ION IMPLANTATION; SINGLE ELECTRON;

CONCENTRATION (PROCESS); ELECTRIC PROPERTIES; ELECTRON TUNNELING; HOLE TRAPS; ION BEAMS; ION IMPLANTATION; OXIDATION; SILICON; SYNTHESIS (CHEMICAL);

NANOSTRUCTURED MATERIALS;

EID: 33744824125     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2191737     Document Type: Article

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