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Volumn 19, Issue 25, 2008, Pages
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Study of the tunnelling initiated leakage current through the carbon nanotube embedded gate oxide in metal oxide semiconductor structures
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Author keywords
[No Author keywords available]
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Indexed keywords
CARBON;
CHARGE COUPLED DEVICES;
CUBIC BORON NITRIDE;
DATA STORAGE EQUIPMENT;
ELECTRIC CONDUCTIVITY;
ELECTRIC CURRENTS;
ELECTRIC POTENTIAL;
EMBEDDED SYSTEMS;
EXCAVATION;
FULLERENES;
GATE DIELECTRICS;
GATES (TRANSISTOR);
LEAKAGE CURRENTS;
METALLIC COMPOUNDS;
MODEL STRUCTURES;
MOS DEVICES;
MOSFET DEVICES;
NANOCOMPOSITES;
NANOPORES;
NANOSTRUCTURED MATERIALS;
NANOSTRUCTURES;
NANOTECHNOLOGY;
NANOTUBES;
NONMETALS;
SEMICONDUCTING SILICON;
SEMICONDUCTOR MATERIALS;
SILICON;
SINGLE-WALLED CARBON NANOTUBES (SWCN);
STRUCTURAL METALS;
TRANSISTOR TRANSISTOR LOGIC CIRCUITS;
TRANSISTORS;
TUNNELING (EXCAVATION);
(1 1 0) SURFACE;
(100) SILICON;
BAND BENDING;
CHARGE STORAGE;
DEVICE APPLICATIONS;
DIRECT TUNNELLING;
FOWLER-NORDHEIM;
GATE BIASES;
GATE OXIDES;
GATE VOLTAGES;
GATE-LEAKAGE CURRENTS;
METAL OXIDE SEMICONDUCTOR (MOS) STRUCTURES;
MOS TRANSISTORS;
NANO TUBE;
NANOTUBE DIAMETERS;
ONSET VOLTAGES;
OXIDE DIELECTRICS;
SCALING DOWN;
SINGLE WALL CARBON NANOTUBES (SWCNTS);
TUNNELLING CURRENTS;
CARBON NANOTUBES;
CARBON NANOTUBE;
METAL OXIDE;
SILICON;
ARTICLE;
ELECTRIC POTENTIAL;
MATHEMATICAL ANALYSIS;
MATHEMATICAL MODEL;
NANOCHEMISTRY;
NANOTECHNOLOGY;
PRIORITY JOURNAL;
SEMICONDUCTOR;
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EID: 44949142937
PISSN: 09574484
EISSN: 13616528
Source Type: Journal
DOI: 10.1088/0957-4484/19/25/255401 Document Type: Article |
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Times cited : (12)
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References (19)
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