Charge storage behaviors of ge nanocrystals embedded in SiO 2 for the application in non-volatile memory devices

Journal of Nanoscience and Nanotechnology

Volumn 10, Issue 7, 2010, Pages 4517-4521

  Yang, M ^a   Chen, T P ^a   Wong, J I ^a   Liu, Y ^a   Tseng, Ampere A ^b   Fung, S ^c  

^a NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

^b Arizona State University   (United States)

^c UNIVERSITY OF HONG KONG   (Hong Kong)

Author keywords

Ge Nanocrystal; Low Energy Ion Implantation; Non Volatile Memory

Indexed keywords

CHARGE LEAKAGE; CHARGE LOSS; CHARGE STORAGE; CO-EXISTENCE; FLAT-BAND VOLTAGE SHIFT; GATE ELECTRODES; GE NANOCRYSTALS; IMPLANTATION DOSE; IMPLANTATION ENERGIES; LOW ENERGIES; LOW-ENERGY ION IMPLANTATION; METAL OXIDE SEMICONDUCTOR STRUCTURES; NON-VOLATILE MEMORY; NONVOLATILE MEMORY DEVICES;

GERMANIUM; NANOCRYSTALS; SILICON COMPOUNDS;

ION IMPLANTATION;

EID: 79953662601     PISSN: 15334880     EISSN: None     Source Type: Journal    
DOI: 10.1166/jnn.2010.2371     Document Type: Conference Paper

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