Proposal of new nonvolatile memory with magnetic nano-dots

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 43, Issue 4 B, 2004, Pages 2203-2206

  Sakaguchi, Takeshi ^a   Hong, Youn Gi ^a   Kobayashi, Motoki ^a   Takata, Masaaki ^a   Choi, Hoon ^a   Shim, Jeoung Chill ^a   Kurino, Hiroyuki ^a   Koyanagi, Mitsumasa ^a  

^a TOHOKU UNIVERSITY   (Japan)

Author keywords

Carrier tunneling probability; Magnetic floating gate; MND; Ni Fe control gate; Retention characteristic

Indexed keywords

ANNEALING; ELECTRON TUNNELING; FERROMAGNETIC MATERIALS; MAGNETIC ANISOTROPY; MAGNETIC FIELD EFFECTS; MAGNETIZATION; MOS CAPACITORS; RANDOM ACCESS STORAGE; THERMODYNAMIC STABILITY; X RAY DIFFRACTION ANALYSIS;

CARRIER TUNNELING PROBABILITY; MAGNETIC FLOATING GATES; MAGNETORESISTIVE RANDOM ACESS MEMORY (MRAM); NI-FE CONTROL GATE; RETENTION CHARACTERISTICS;

NONVOLATILE STORAGE;

EID: 3142609255     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/JJAP.43.2203     Document Type: Conference Paper

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