Memory operation of silicon quantum-dot floating-gate metal-oxide-semiconductor field-effect transistors

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 40, Issue 7 B, 2001, Pages

  Kohno, Atsushi ^b   Murakami, Hideki ^a   Ikeda, Mitsuhisa ^a   Miyazaki, Seiichi ^a   Hirose, Masataka ^a  

^a HIROSHIMA UNIVERSITY   (Japan)

^b FUKUOKA UNIVERSITY   (Japan)

Author keywords

Electron charging; Floating gate; Memory function; MOS memory; Multiple step charging; Silicon quantum dot

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; DATA STORAGE EQUIPMENT; GATES (TRANSISTOR); MORPHOLOGY; SEMICONDUCTING SILICON; SEMICONDUCTOR QUANTUM DOTS; SILICA; THRESHOLD VOLTAGE;

MULTIPLE-STEP CHARGING;

MOSFET DEVICES;

EID: 0035878258     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.40.l721     Document Type: Article

References (11)