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Applied Surface Science

Volumn 257, Issue 24, 2011, Pages 10571-10575

Study of nickel silicide formation on Si(1 1 0) substrate

(6) Guo, Xiao a Yu, Hao a Jiang, Yu Long a Ru, Guo Ping a Zhang, David Wei a Li, Bing Zong a

a FUDAN UNIVERSITY (China)

Author keywords

Nickel silicide; Rapid thermal annealing; Schottky contacts; Si(1 1 0) substrate

Indexed keywords

NICKEL; RAPID THERMAL ANNEALING; SCHOTTKY BARRIER DIODES; SILICIDES; SUBSTRATES; X RAY DIFFRACTION;

ANNEALING TEMPERATURES; ELECTRICAL CHARACTERISTIC; FORMATION TEMPERATURE; NICKEL SILICIDE; RAMAN SCATTERING SPECTROSCOPY; RECTIFYING CHARACTERISTICS; SCHOTTKY BARRIER HEIGHTS; SCHOTTKY CONTACTS;

NICKEL COMPOUNDS;

EID: 80052942609 PISSN: 01694332 EISSN: None Source Type: Journal
DOI: 10.1016/j.apsusc.2011.07.052 Document Type: Article

Times cited : (10)

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