Study of gaseous interactions in carbon nanotube field-effect transistors through selective Si3N4 passivation

Nanotechnology

Volumn 19, Issue 46, 2008, Pages

  Peng, Ning ^a   Zhang, Qing ^a   Tan, Ooi Kiang ^a   Marzari, Nicola ^b  

^a NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

^b MASSACHUSETTS INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ADSORPTION; DISTILLATION; ELECTRIC RECTIFIERS; EPITAXIAL GROWTH; FIELD EFFECT TRANSISTORS; FLOW INTERACTIONS; GAS ADSORPTION; MODULATION; NANOCOMPOSITES; NANOSENSORS; NANOTUBES; OXYGEN; PASSIVATION; SEMICONDUCTING SILICON COMPOUNDS; TRANSISTORS;

ADSORPTION ENERGIES; CARBON NANOTUBE DEVICES; CONTACT BARRIER HEIGHTS; CURRENT RECTIFICATIONS; GAS PRESSURES; KEY PARAMETERS; NANOTUBE CHANNELS; OXYGEN MOLECULES; RECTIFYING CHARACTERISTICS; SOURCE AND DRAINS; SOURCE CONTACTS;

CARBON NANOTUBES;

CARBON NANOTUBE; OXYGEN;

ADSORPTION; ARTICLE; ATMOSPHERIC PRESSURE; DEVICE; ELECTRIC CURRENT; FIELD EFFECT TRANSISTOR; LIGHT EMITTING DIODE; MOLECULAR INTERACTION; PRIORITY JOURNAL; SEMICONDUCTOR;

EID: 58149231271     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/19/46/465201     Document Type: Article

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