A carbon nanotube field effect transistor with a suspended nanotube gate

Nano Letters

Volumn 7, Issue 8, 2007, Pages 2291-2294

  Tarakanov, Yury A ^a   Kinaret, Jari M ^a  

^a CHALMERS UNIVERSITY OF TECHNOLOGY   (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

DETECTORS; ELECTROSTATICS; MULTIWALLED CARBON NANOTUBES (MWCN); NEMS; SINGLE-WALLED CARBON NANOTUBES (SWCN);

GATE COUPLING; GATE ELECTRODES; MECHANICAL MOTION; NANOTUBE GATE;

FIELD EFFECT TRANSISTORS;

NANOTUBE;

ARTICLE; CHEMISTRY; CONFORMATION; CRYSTALLIZATION; EQUIPMENT; EQUIPMENT DESIGN; INSTRUMENTATION; MATERIALS TESTING; METHODOLOGY; MICROELECTRODE; NANOTECHNOLOGY; PARTICLE SIZE; SEMICONDUCTOR; SURFACE PROPERTY; ULTRASTRUCTURE;

CRYSTALLIZATION; EQUIPMENT DESIGN; EQUIPMENT FAILURE ANALYSIS; MATERIALS TESTING; MICROELECTRODES; MOLECULAR CONFORMATION; NANOTECHNOLOGY; NANOTUBES; PARTICLE SIZE; SURFACE PROPERTIES; TRANSISTORS;

EID: 34548153352     PISSN: 15306984     EISSN: None     Source Type: Journal    
DOI: 10.1021/nl070891+     Document Type: Article

References (27)

1. Rueckes, T.; Kim, K.; Joselevich, E.; Tseng, G. Y.; Cheung, C.-L.; Lieber, C. M. Science 2000, 289, 94.
2. Maslov, L. Nanotechnology 2006, 17, 2475.
3. Kinaret, J. M.; Nord, T.; Viefers, S. Appl. Phys. Lett. 2003, 82, 1287.
4. Jonsson, L. M.; Nord, T.; Viefers, S.; Kinaret, J. M. J. Appl. Phys. 2004, 96, 629.
5. Hwang, H. J.; Kang, J. W. Physica E 2005, 27, 163.
6. Jonsson, L. M.; Axelsson, S.; Nord, T.; Viefers, S.; Kinaret, J. M. Nanotechnology 2004, 15, 1497.
7. Sazonova, V.; Yaish, Y.; Ustunel, H.; Roundy, D.; Arias, T. A.; McEuen, P. L. Nature 2004, 431, 284.
8. Witkamp, B.; Poot, M.; van der Zant, H. S. J. Nano Lett. 2006, 6, 2904.
9. Lee, S.-W.; Lee, D.-S.; Morjan, R. E; Jhang, S. H.; Sveningsson, M.; Nerushev, O. A.; Park, Y. W.; Campbell, E. B. Nano Lett. 2004, 4, 2027.
10. Bachtold, A.; Hadley, P.; Nakanishi, T.; Dekker, C. Science 2001, 294, 1317.
11. Chen, Z.; Appenzeller, J.; Lin, Y.-M.; Sippel-Oakley, J.; Rinzler, A. G.; Tang, J.; Wind, S. J.; Solomon, P. M.; Avouris, P. Science 2006, 377, 5768.
12. Wind, S. J.; Appenzeller, J.; Martel, R.; Derycke, V.; Avouris, P. Appl. Phys. Lett. 2002, 80, 3817.
13. Abele, N.; Fritschi, R.; Boukart, K.; Casset, F.; Ancey, P.; Ionescu, A. IEDM Tech. Dig. 2005, 1075.
14. Engström, K. E.; Kinaret, J. M. IEEE Electron Device Lett. 2006, 27, 988.
15. Lee, D.-S.; Svensson, J.; Lee, S. W.; Park, Y. W.; Campbell, E. B. J. Nanosci. Nanotechnol. 2006, 6, 1325.
16. Guo, J.; Alam, M. A. Appl. Phys. Lett. 2005, 86, 023105.
17. Tersoff, J.; Freitag, M.; Tsang, J. C.; Avouris, Ph. Appl. Phys. Lett. 2005, 86, 263108.
18. Perebeinos, V.; Tersoff, J.; Avouris, Ph. Nano Lett. 2006, 6, 205.
19. Zhou, X.; Park, J. Y.; Huang, S.; Liu, J.; McEuen, P. Phys. Rev. Lett. 2005, 95, 146805.
20. Paris, F.; Canas, J. Boundary Element Method: Fundamentals and Applications; Oxford University Press: New York, 1997.
21. Shi, F.; Ramesh, P.; Mukherjee, S. Comput. Struct. 1995, 56, 769.
22. Dresselhaus, M. S.; Dresselhaus, G.; Avouris, Ph. Carbon Nanotubes: Synthesis, Structure, Properties and Application; Springer-Verlag: Heidelberg, 2001; Vol. 80.
23. Poncharal, P.; Wang, Z. L.; Ugarte, D.; de Heer, W. A. Science 1999, 283, 1513.
24. Wang, X. Y.; Wang, X. Composites Part B 2004, 35, 79.
25. Lefèvre, R.; Goffman, M. F.; Derycke, V.; Miko, C.; Forró, L.; Bourgoin, J. P.; Hesto, P. Phys. Rev. Lett 2005, 95, 185504.
26. Demczyk, B. G.; Wang, Y. M.; Cumings, J.; Hetman, M.; Han, W.; Zettl, A.; Ritchie, R. O. Mater. Sci. Eng., A 2002, 334, 173.
27. Stampfer, C.; Jungen, A.; Linderman, R.; Obergfell, D.; Roth, S.; Hierold, C. Nano Lett. 2006, 6, 1449.