GaN-based LEDs with air voids prepared by one-step MOCVD growth

Journal of Lightwave Technology

Volumn 29, Issue 18, 2011, Pages 2831-2835

  Lin, N M ^a   Chang, S J ^a   Shei, S C ^b   Lai, W C ^a   Yang, Y Y ^a   Lin, W C ^a   Lo, H M ^a  

^a NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

^b NATIONAL UNIVERSITY OF TAINAN   (Taiwan)

Author keywords

Air voids; GaN; laser scribing; lateral etching; light emitting diodes (LEDs); TracePro

Indexed keywords

AIR VOIDS; GAN; LASER SCRIBING; LATERAL ETCHING; TRACEPRO;

ETCHING; GALLIUM ALLOYS; GALLIUM NITRIDE;

ORGANIC LIGHT EMITTING DIODES (OLED);

EID: 80052610050     PISSN: 07338724     EISSN: None     Source Type: Journal    
DOI: 10.1109/JLT.2011.2162821     Document Type: Article

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