Formation of ohmic contacts to ultra-thin channel AlN/GaN HEMTs

Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 5, Issue 6, 2008, Pages 2030-2032

  Zimmermann, Tom ^a   Deen, David ^a   Cao, Yu ^a   Jena, Debdeep ^a   Xing, Huili Grace ^a  

^a UNIVERSITY OF NOTRE DAME   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALGAN/GAN; ALN; ALN BARRIERS; ANNEALING CONDITION; GATE PATTERNING; HETEROSTRUCTURES; HIGH QUALITY; HIGH-SPEED APPLICATIONS; HIGH-TEMPERATURE ANNEALING; ULTRA-THIN; ULTRA-THIN CHANNELS;

ANNEALING; ELECTRIC CONTACTORS; ELECTRON MOBILITY; GALLIUM NITRIDE; HETEROJUNCTIONS; OHMIC CONTACTS;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 47249122077     PISSN: 18626351     EISSN: 16101642     Source Type: Journal    
DOI: 10.1002/pssc.200778724     Document Type: Conference Paper

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