GaN-based submicrometer HEMTs with lattice-matched InAlGaN barrier grown by MBE

IEEE Electron Device Letters

Volumn 31, Issue 7, 2010, Pages 671-673

  Lim, T ^a   Aidam, R ^a   Waltereit, P ^a   Henkel, T ^a   Quay, R ^a   Lozar, R ^a   Maier, T ^a   Kirste, L ^a   Ambacher, O ^a  

^a FRAUNHOFER INSTITUTE FOR APPLIED SOLID STATE PHYSICS IAF   (Germany)

Author keywords

HFET; high electron mobility transistor (HEMT); InAlGaN; lattice matched; molecular beam epitaxy (MBE); quaternary; transistor

Indexed keywords

AL-CONTENT; DC PERFORMANCE; EXTRINSIC TRANSCONDUCTANCE; GAN HEMTS; GATE LENGTH; INALGAN; LATTICE-MATCHED; MAXIMUM CURRENT DENSITY; N TRANSISTOR; OUTPUT POWER DENSITY; POWER MEASUREMENT; POWER-ADDED EFFICIENCY; QUATERNARY BARRIERS; STRAIN-FREE; SUBMICROMETERS;

CRYSTAL GROWTH; DC POWER TRANSMISSION; ELECTRON MOBILITY; ELECTRONS; GALLIUM ALLOYS; GALLIUM NITRIDE; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; SEMICONDUCTING SILICON COMPOUNDS; SILICON CARBIDE; TRANSISTORS;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 77954144413     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2010.2048996     Document Type: Article

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