Si diffusion in epitaxial GaN

Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 3, Issue , 2006, Pages 1416-1419

  Jakiela, Rafal ^a,b   Barcz, Adam ^a,b   Dumiszewska, Ewa ^a   Jagoda, Andrzej ^a  

^a ukasiewicz Research Network Institute of Microelectronics and Photonics   (Poland)

^b INSTITUTE OF PHYSICS   (Poland)

Author keywords

[No Author keywords available]

Indexed keywords

DIFFUSION COEFFICIENTS; NITROGEN PRESSURE; ROOM TEMPERATURE; SAPPHIRE SUBSTRATES; 66.30.JT; 68.55.LN; 81.05.EA; 81.15.KK; 81.40.EF; 82.80.MS;

ANNEALING; DIFFUSION; GRAIN BOUNDARIES; ION IMPLANTATION; METALLORGANIC VAPOR PHASE EPITAXY; SECONDARY ION MASS SPECTROMETRY; SILICON; ALUMINUM NITRIDE; DIFFUSION IN SOLIDS; EPITAXIAL GROWTH; GALLIUM NITRIDE; SAPPHIRE;

GALLIUM NITRIDE; SILICON;

EID: 33746327463     PISSN: 18626351     EISSN: None     Source Type: Journal    
DOI: 10.1002/pssc.200565112     Document Type: Conference Paper

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