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Volumn 5, Issue 4, 2011, Pages 434-437
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The analysis of Au/TiO2/n-Si schottky barrier diode at high temperatures using I-V characteristics
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Author keywords
DC magnetron sputtering; Schottky barrier diode; Temperature dependence
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Indexed keywords
DIODES;
ELECTRIC RESISTANCE;
GOLD COMPOUNDS;
MAGNETRON SPUTTERING;
OXIDE MINERALS;
SILICON;
SILICON COMPOUNDS;
TEMPERATURE DISTRIBUTION;
TITANIUM DIOXIDE;
DC MAGNETRON SPUTTERING;
DC MAGNETRON SPUTTERING SYSTEMS;
ELECTRICAL PARAMETER;
IV CHARACTERISTICS;
SCHOTTKY BARRIER DIODES (SBDS);
SERIES RESISTANCES;
TEMPERATURE DEPENDENCE;
TEMPERATURE RANGE;
SCHOTTKY BARRIER DIODES;
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EID: 80052534983
PISSN: 18426573
EISSN: 20653824
Source Type: Journal
DOI: None Document Type: Article |
Times cited : (18)
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References (22)
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