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Volumn 5, Issue 4, 2011, Pages 434-437

The analysis of Au/TiO2/n-Si schottky barrier diode at high temperatures using I-V characteristics

Author keywords

DC magnetron sputtering; Schottky barrier diode; Temperature dependence

Indexed keywords

DIODES; ELECTRIC RESISTANCE; GOLD COMPOUNDS; MAGNETRON SPUTTERING; OXIDE MINERALS; SILICON; SILICON COMPOUNDS; TEMPERATURE DISTRIBUTION; TITANIUM DIOXIDE;

EID: 80052534983     PISSN: 18426573     EISSN: 20653824     Source Type: Journal    
DOI: None     Document Type: Article
Times cited : (18)

References (22)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.