The pinch-off effect and inhomogeneous barrier height analysis in Al/p-GaAs Schottky barrier diodes

Optoelectronics and Advanced Materials, Rapid Communications

Volumn 5, Issue 2, 2011, Pages 135-142

  Soylu, M ^a   Yakuphanoglu, F ^b   Farooq, W A ^c  

^a BINGOL UNIVERSITY   (Turkey)

^b FIRAT UNIVERSITY   (Turkey)

^c KING SAUD UNIVERSITY   (Saudi Arabia)

Author keywords

Barrier inhomogeneities; GaAs; I V and C V measurements; Schottky diode

Indexed keywords

CAPACITANCE; CURRENT VOLTAGE CHARACTERISTICS; DIODES; ELECTRON TRANSPORT PROPERTIES; GALLIUM ARSENIDE; III-V SEMICONDUCTORS; SEMICONDUCTOR METAL BOUNDARIES; THERMIONIC EMISSION;

BARRIER HEIGHT INHOMOGENEITY; BARRIER INHOMOGENEITIES; C-V MEASUREMENT; CAPACITANCE VOLTAGE CHARACTERISTIC; EFFECTIVE BARRIER HEIGHTS; GAAS; SCHOTTKY DIODES; THERMIONIC EMISSION THEORY;

SCHOTTKY BARRIER DIODES;

EID: 79951823535     PISSN: 18426573     EISSN: 20653824     Source Type: Journal    
DOI: None     Document Type: Article

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