Impact of attractive ion in undoped channel on characteristics of nanoscale multigate field effect transistors: A three-dimensional nonequilibrium green's function study

Japanese Journal of Applied Physics

Volumn 49, Issue 4 PART 2, 2010, Pages

  Kamakura, Yoshinari ^a,b   Mil'nikov, Gennady ^a,b   Mori, Nobuya ^a,b   Taniguchi, Kenji ^a  

^a OSAKA UNIVERSITY   (Japan)

^b JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

DOUBLE-GATE STRUCTURES; ELECTRON BOUND; ELECTROSTATIC SCREENING; GATE-ALL-AROUND; INTRINSIC DEVICE; MULTI-GATE FIELD EFFECT TRANSISTORS; NANO SCALE; NON-EQUILIBRIUM GREEN'S FUNCTION; NONEQUILIBRIUM GREEN'S FUNCTION TECHNIQUE; ON-CURRENTS; POSITIVELY CHARGED; POTENTIAL BARRIERS; RIGOROUS SIMULATION; SINGLE DONOR; THRESHOLD VOLTAGE SHIFTS; UNDOPED CHANNELS;

GREEN'S FUNCTION; IONS; THREE DIMENSIONAL; THRESHOLD VOLTAGE;

FIELD EFFECT TRANSISTORS;

EID: 77952710208     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.49.04DC19     Document Type: Article

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