SCOPUS 정보 검색 플랫폼

Volumn 96, Issue 10, 2010, Pages

Multiband quantum transport simulations of ultimate p-type double-gate transistors: Influence of the channel orientation

(4) Cavassilas, Nicolas a Pons, Nicolas a Michelini, Fabienne a Bescond, Marc a

a AIX MARSEILLE UNIVERSITÉ (France)

Author keywords

[No Author keywords available]

Indexed keywords

BALLISTIC TRANSPORTS; CHANNEL ORIENTATIONS; DOUBLE-GATE; DOUBLE-GATE TRANSISTOR; METAL OXIDE SEMICONDUCTOR; MULTIBAND; NON-EQUILIBRIUM GREEN'S FUNCTION FORMALISM; P-TYPE; PMOS DEVICES; QUANTUM TRANSPORT SIMULATIONS; REAL-SPACE; SOURCE-DRAIN; SUB-THRESHOLD BEHAVIOR; TRANSISTOR CHANNELS; TRANSPORT DIRECTION; TRANSPORT MODELS;

BALLISTICS; GATES (TRANSISTOR); GREEN'S FUNCTION; QUANTUM CHEMISTRY; QUANTUM ELECTRONICS;

TRANSISTORS;

EID: 77949766990 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3352558 Document Type: Article

Times cited : (11)

References (17)

1
- 77949732803
- http://public.itrs.net

2
- 0034794354
- Symposium on VLSI Technology,.
- K. Rim, S. Koester, M. Hargrove, J. Chu, P. M. Mooney, J. Ott, T. Kanarsky, P. Ronsheim, M. Ieong, A. Grill, and H. S. P. Wong, Digest of Technical Papers., Symposium on VLSI Technology, 2001, p. 59-60.
- (2001) Digest of Technical Papers , pp. 59-60
- Rim, K.¹ Koester, S.² Hargrove, M.³ Chu, J.⁴ Mooney, P.M.⁵ Ott, J.⁶ Kanarsky, T.⁷ Ronsheim, P.⁸ Ieong, M.⁹ Grill, A.¹⁰ Wong, H.S.P.¹¹

3
- 0001038893
- 0021-8979,. 10.1063/1.363052
- M. V. Fischetti and S. E. Laux, J. Appl. Phys. 0021-8979 80, 2234 (1996). 10.1063/1.363052
- (1996) J. Appl. Phys. , vol.80 , pp. 2234
- Fischetti, M.V.¹ Laux, S.E.²

4
- 77949758576
- 0163-1918.
- M. Bescond, N. Cavassilas, K. Kalna, K. Nehari, L. Raymond, J. L. Autran, M. Lannoo, and A. Asenov, Tech. Dig.-Int. Electron Devices Meet. 0163-1918 2005, 533.
- Tech. Dig. - Int. Electron Devices Meet. , vol.2005 , pp. 533
- Bescond, M.¹ Cavassilas, N.² Kalna, K.³ Nehari, K.⁴ Raymond, L.⁵ Autran, J.L.⁶ Lannoo, M.⁷ Asenov, A.⁸

5
- 62549146082
- 0163-1918.
- S. E. Laux, Tech. Dig.-Int. Electron Devices Meet. 0163-1918 2004, 135.
- Tech. Dig. - Int. Electron Devices Meet. , vol.2004 , pp. 135
- Laux, S.E.¹

6
- 51349119087
- 0003-6951,. 10.1063/1.2978196
- K. Nehari, M. Lannoo, F. Michelini, N. Cavassilas, M. Bescond, and J. L. Autran, Appl. Phys. Lett. 0003-6951 93, 092103 (2008). 10.1063/1.2978196
- (2008) Appl. Phys. Lett. , vol.93 , pp. 092103
- Nehari, K.¹ Lannoo, M.² Michelini, F.³ Cavassilas, N.⁴ Bescond, M.⁵ Autran, J.L.⁶

7
- 0043269756
- 0021-8979,. 10.1063/1.1585120
- M. V. Fischetti, Z. Ren, P. M. Solomon, M. Yang, and K. Rim, J. Appl. Phys. 0021-8979 94, 1079 (2003). 10.1063/1.1585120
- (2003) J. Appl. Phys. , vol.94 , pp. 1079
- Fischetti, M.V.¹ Ren, Z.² Solomon, P.M.³ Yang, M.⁴ Rim, K.⁵

8
- 41749122416
- 0018-9383,. 10.1109/TED.2007.902873
- M. De Michielis, D. Esseni, Y. L. Tsang, P. Palestri, L. Selmi, A. G. O'Neill, and S. Chattopadhyay, IEEE Trans. Electron Devices 0018-9383 54, 2164 (2007). 10.1109/TED.2007.902873
- (2007) IEEE Trans. Electron Devices , vol.54 , pp. 2164
- De Michielis, M.¹ Esseni, D.² Tsang, Y.L.³ Palestri, P.⁴ Selmi, L.⁵ O'Neill, A.G.⁶ Chattopadhyay, S.⁷

9
- 33746660404
- Physics of hole transport in strained silicon MOSFET inversion layers
- DOI 10.1109/TED.2006.877370
- E. X. Wang, P. Matagne, L. Shifren, B. Obradovic, R. Kotlyar, S. Cea, M. Stettler, and M. D. Giles, IEEE Trans. Electron Devices 0018-9383 53, 1840 (2006). 10.1109/TED.2006.877370 (Pubitemid 44145090)
- (2006) IEEE Transactions on Electron Devices , vol.53 , Issue.8 , pp. 1840-1851
- Wang, E.X.¹ Matagne, P.² Shifren, L.³ Obradovic, B.⁴ Kotlyar, R.⁵ Cea, S.⁶ Stettler, M.⁷ Giles, M.D.⁸

10
- 72449156756
- 0163-1829,. 10.1103/PhysRevB.80.155430
- M. Luisier and G. Klimeck, Phys. Rev. B 0163-1829 80, 155430 (2009). 10.1103/PhysRevB.80.155430
- (2009) Phys. Rev. B , vol.80 , pp. 155430
- Luisier, M.¹ Klimeck, G.²

11
- 0043210202
- 0096-8250,. 10.1103/PhysRev.97.869
- J. M. Luttinger and W. Kohn, Phys. Rev. 0096-8250 97, 869 (1955). 10.1103/PhysRev.97.869
- (1955) Phys. Rev. , vol.97 , pp. 869
- Luttinger, J.M.¹ Kohn, W.²

12
- 24144440783
- 0003-6951,. 10.1063/1.1994929
- N. Cavassilas, M. Bescond, and J. L. Autran, Appl. Phys. Lett. 0003-6951 87, 073509 (2005). 10.1063/1.1994929
- (2005) Appl. Phys. Lett. , vol.87 , pp. 073509
- Cavassilas, N.¹ Bescond, M.² Autran, J.L.³

13
- 63049133304
- 0038-1101,. 10.1016/j.sse.2008.08.006
- D. Rideau, M. Feraille, M. Michaillat, Y. M. Niquet, C. Tavernier, and H. Jaouen, Solid-State Electron. 0038-1101 53, 452 (2009). 10.1016/j.sse.2008.08. 006
- (2009) Solid-State Electron. , vol.53 , pp. 452
- Rideau, D.¹ Feraille, M.² Michaillat, M.³ Niquet, Y.M.⁴ Tavernier, C.⁵ Jaouen, H.⁶

14
- 0000363279
- 0163-1829,. 10.1103/PhysRevB.58.9941
- R. Oberhuber, G. Zandler, and P. Vogl, Phys. Rev. B 0163-1829 58, 9941 (1998). 10.1103/PhysRevB.58.9941
- (1998) Phys. Rev. B , vol.58 , pp. 9941
- Oberhuber, R.¹ Zandler, G.² Vogl, P.³

15
- 70349342821
- 0021-8979,. 10.1063/1.3208067
- M. Shin, J. Appl. Phys. 0021-8979 106, 054505 (2009). 10.1063/1.3208067
- (2009) J. Appl. Phys. , vol.106 , pp. 054505
- Shin, M.¹

16
- 0034288884
- 0272-4979,. 10.1093/imanum/20.4.499
- N. J. Higham and H. M. Kim, IMA J. Numer. Anal. 0272-4979 20, 499 (2000). 10.1093/imanum/20.4.499
- (2000) IMA J. Numer. Anal. , vol.20 , pp. 499
- Higham, N.J.¹ Kim, H.M.²

17
- 70350054841
- 0018-9383,. 10.1109/TED.2009.2028382
- C. Buran, M. G. Pala, M. Bescond, M. Dubois, and M. Mouis, IEEE Trans. Electron Devices 0018-9383 56, 2186 (2009). 10.1109/TED.2009.2028382
- (2009) IEEE Trans. Electron Devices , vol.56 , pp. 2186
- Buran, C.¹ Pala, M.G.² Bescond, M.³ Dubois, M.⁴ Mouis, M.⁵

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.