Investigation of 1.2 kV SiC MOSFET for high frequency high power applications

Conference Proceedings - IEEE Applied Power Electronics Conference and Exposition - APEC

Volumn , Issue , 2010, Pages 1572-1577

  Sheng, Honggang ^a   Chen, Zheng ^b   Wang, Fred ^c   Millner, Alan ^d  

^a Monolithic Power Systems   (United States)

^b VIRGINIA POLYTECHNIC INSTITUTE AND STATE UNIVERSITY   (United States)

^c UNIVERSITY OF TENNESSEE   (United States)

^d MKS Instruments   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COOLMOS; HALF-BRIDGE; HIGH FREQUENCY; HIGH FREQUENCY HF; HIGH POWER APPLICATIONS; HIGH-POWER; PARALLEL RESONANT; PERFORMANCE IMPROVEMENTS; POWER ELECTRONIC DEVICES; PROMISING MATERIALS; SIC MOSFET; STATIC AND DYNAMIC;

MOSFET DEVICES; POWER ELECTRONICS; SILICON; SILICON CARBIDE; ZERO VOLTAGE SWITCHING;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 77952232453     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/APEC.2010.5433441     Document Type: Conference Paper

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