Radio-frequency transistors using chemical-vapor-deposited monolayer graphene: Performance, doping, and transport effects

IEEE Transactions on Electron Devices

Volumn 58, Issue 9, 2011, Pages 2847-2853

  Nayfeh, Osama M ^a  

^a U S ARMY RESEARCH LABORATORY   (United States)

Author keywords

Ambipolar; chemical vapor deposition (CVD); doping; graphene; mobility; radio frequency (RF); transistor

Indexed keywords

AMBIPOLAR; COULOMB SCATTERING; DC TRANSCONDUCTANCE; DRIFT-DIFFUSION MODEL; DRIVE CURRENTS; GATE LENGTH; LOW BACK; MEAN FREE PATH; P-TYPE DOPING; PERFORMANCE POTENTIALS; RADIO FREQUENCIES; RADIO FREQUENCY (RF); RF DEVICES; RF MEASUREMENTS; TOP-GATE;

CUTOFF FREQUENCY; GRAPHENE; HIGH ELECTRON MOBILITY TRANSISTORS; MONOLAYERS; SCATTERING; TRANSISTORS;

CHEMICAL VAPOR DEPOSITION;

EID: 80052099451     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2011.2159721     Document Type: Article

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