Relation between low-frequency noise and subgap density of states in amorphous InGaZnO thin-film transistors

IEEE Electron Device Letters

Volumn 31, Issue 11, 2010, Pages 1236-1238

  Kim, Sungchul ^a   Jeon, Yongwoo ^a   Lee, Je Hun ^b   Ahn, Byung Du ^b   Park, Sei Yong ^b   Park, Jun Hyun ^b   Kim, Joo Han ^a,b   Park, Jaewoo ^b   Kim, Dong Myong ^a   Kim, Dae Hwan ^a  

^a Kookmin University   (South Korea)

^b SAMSUNG Electronics   (South Korea)

Author keywords

Amorphous oxide thin film transistor (TFT); density of states (DOS); InGaZnO; low frequency noise (LFN)

Indexed keywords

AC GATE VOLTAGE; AC STRESS; CARRIER NUMBER FLUCTUATION; DENSITY OF STATE; ELECTRICAL STRESS; GENERATION-RECOMBINATION NOISE; INGAZNO; LOGARITHMIC CURVE; LOW-FREQUENCY NOISE; MOBILITY FLUCTUATIONS; POST-ANNEALING TEMPERATURE; TRAP CENTER;

AMORPHOUS FILMS; ANNEALING; CARRIER MOBILITY; POWER SPECTRAL DENSITY; SEMICONDUCTING ORGANIC COMPOUNDS; THERMAL NOISE;

THIN FILM TRANSISTORS;

EID: 78049248468     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2010.2061216     Document Type: Article

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