The influence of in/Zn ratio on the performance and negative-bias instability of Hf-In-Zn-O thin-film transistors under illumination

IEEE Electron Device Letters

Volumn 32, Issue 9, 2011, Pages 1251-1253

  Kim, Hyun Suk ^a   Park, Joon Seok ^a   Maeng, Wan Joo ^a   Son, Kyoung Seok ^a   Kim, Tae Sang ^a   Ryu, Myungkwan ^a   Lee, Jiyoul ^a   Lee, Jae Cheol ^a   Ko, Gunwoo ^b   Im, Seongil ^b   Lee, Sang Yoon ^a  

^a Samsung Advanced Institute of Technology (SAIT)   (South Korea)

^b Yonsei University   (South Korea)

Author keywords

Cation composition; Hf In Zn O (HIZO); thin film transistor (TFT)

Indexed keywords

ACTIVE LAYER; CARRIER TRAPS; CATION COMPOSITION; DEFECT STATE; DENSITY-OF-STATES ANALYSIS; FIELD-EFFECT MOBILITIES; HF-IN-ZN-O (HIZO); NEGATIVE SHIFT; ZN CATIONS;

DEFECT DENSITY; DEFECTS; HAFNIUM; INDIUM; POSITIVE IONS; SEMICONDUCTING ORGANIC COMPOUNDS; TRANSISTORS; ZINC;

THIN FILM TRANSISTORS;

EID: 80052029477     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2011.2160836     Document Type: Article

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