Influences of channel metallic composition on indium zinc oxide thin-film transistor performance

Semiconductor Science and Technology

Volumn 26, Issue 8, 2011, Pages

  Yao, Qijun ^a,b   Li, Shuxin ^b   Zhang, Qun ^a  

^a FUDAN UNIVERSITY   (China)

^b TianMa Microelectronics Co Ltd   (China)

Author keywords

[No Author keywords available]

Indexed keywords

CHANNEL LAYERS; CHEMICAL STATE; FIELD-EFFECT MOBILITIES; INDIUM ZINC OXIDES; MOLAR CONTENT; PULSED PLASMA DEPOSITION; SEMICONDUCTOR CHANNELS;

METALLIC COMPOUNDS; PLASMA DEPOSITION; SEMICONDUCTING INDIUM; SEMICONDUCTING ORGANIC COMPOUNDS; THIN FILM TRANSISTORS; TRANSISTORS; ZINC; ZINC OXIDE;

INDIUM;

EID: 80051999122     PISSN: 02681242     EISSN: 13616641     Source Type: Journal    
DOI: 10.1088/0268-1242/26/8/085011     Document Type: Article

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